SJ/T 11488-2015 English PDF (SJT11488-2015)

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SJ/T 11488-2015: Test method for measuring resistivity, hall coefficient and determining hall mobility in semi-insulating GaAs single crystals
SJ/T 11488-2015
SJ
ELECTRONIC INDUSTRY STANDARD
OF THE PEOPLE’S REPUBLIC OF CHINA
ICS 29.045
H 83
Filing No.: 50545-2015
Test method for measuring resistivity, hall coefficient and
determining hall mobility in semi-insulating GaAs single
crystals
ISSUED ON: APRIL 30, 2015
IMPLEMENTED ON: OCTOBER 01, 2015
Issued by: Ministry of Industry and Information Technology of PRC
Table of Contents
Foreword ... 3 
1 Scope ... 4 
2 Normative references ... 4 
3 Terms and definitions ... 4 
4 Principles of the method ... 4 
5 Interfering factors ... 5 
6 Instruments ... 5 
7 Environmental requirements ... 5 
8 Sample preparation ... 5 
9 Measurement procedure ... 5 
10 Calculations ... 6 
11 Precision ... 7 
12 Reports ... 7 
Test method for measuring resistivity, hall coefficient and
determining hall mobility in semi-insulating GaAs single
crystals
1 Scope
This standard specifies the methods for measuring resistivity, hall coefficient and
determining hall mobility in semi-insulating GaAs single crystals.
This standard applies to the measurement of electrical parameters of semi-insulating
GaAs single crystals, which have a resistivity in the range of 104 Ω•cm ~ 109 Ω•cm.
2 Normative references
The following documents are essential to the application of this document. For the dated
documents, only the versions with the dates indicated are applicable to this document;
for the undated documents, only the latest version (including all the amendments) is
applicable to this standard.
GB/T 4326 Extrinsic semiconductor single crystals measurement of Hall mobility
and Hall coefficient
GB/T 14264 Semiconductor materials - Terms and definitions
3 Terms and definitions
The terms and definitions, which are defined in GB/T 14264, apply to this document.
4 Principles of the method
When a current I is passed along the X-axis direction, on a rectangular semiconductor
sheet, AND a magnetic field B is applied in the Z-axis direction, a potential difference
VH is generated in the direction, which is perpendicular to the current and magnetic
field (that is, the Y-axis direction). This phenomenon is called Hall effect, wherein VH
is called the Hall voltage. The cause of the Hall effect is the Lorentz force of the charged
particles, that form the directional movement of the current, that is, the carrier in the
magnetic field. The Hall effect can be used to measure the electrical parameters of the
semi-insulating GaAs single crystals.
5 Interfering factors
Measurement temperature, ohmic contact electrode preparation, etc. will all affect the
measurement results.
6 Instruments
The measuring instrument consists of the following parts:
a) Hall test system. The applied magnetic field strength is 0.3 T ~ 1.0 T; the
uniformity of the magnetic field within the sample measurement range is better
than 1%; the input impedance is lower than 1013 Ω; the accuracy of the current
source is better than 1%; the temperature accuracy is better than 0.1 °C;
b) Micrometer, accuracy ±0.01 mm;
c) Sample holder, protected from light.
7 Environmental requirements
The ambient temperature is 22 °C ~ 24 °C; the relative humidity is less than 60%. The
test shielding room shall not have mechanical shock, vibration, or electromagnetic
interference.
8 Sample preparation
8.1 Cutting, grinding, cleaning of specimen
Follow the requirements of GB/T 4326, to carry out cutting, grinding, cleaning of
specimen.
8.2 Ohm contact electrodes
Follow the requirements of GB/T 4326, use In, AuGe/Au or AuGe/Ni alloys to prepare
ohmic contact electrodes.
9 Measurement procedure
Make measurement, according to the measurement steps which are specified in GB/T
4326.