SJ/T 11624-2016 English PDF (SJT11624-2016)

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SJ/T 11624-2016: Specifications of LED devices for LED displays
SJ/T 11624-2016
SJ
ELECTRONIC INDUSTRY STANDARD
OF THE PEOPLE’S REPUBLIC OF CHINA
ICS 31.120
L 63
Record No.:
Specifications of LED Devices for LED Displays
ISSUED ON: APRIL 05, 2016
IMPLEMENTED ON: SEPTEMBER 01, 2016
Issued by: Ministry of Industry and Information Technology of PRC
Table of Contents
Foreword ... 3
1 Scope ... 4
2 Normative References ... 4
3 Terms and Definitions ... 5
4 Classification ... 5
5 Requirements ... 6
6 Inspection Methods ... 8
7 Inspection Rules ... 11
8 Additional Instructions ... 16
Appendix A (Normative) Electrical Endurance Test ... 18
Appendix B (Normative) Test on Resistance to Welding Heat – Simulated
Reflow Soldering ... 20
Specifications of LED Devices for LED Displays
1 Scope
This Specification specifies the performance requirements, inspection methods,
inspection rules, etc. of light-emitting diode (hereinafter referred to as "LED") used in
light-emitting diode (LED) displays.
This Specification is applicable to LED used in indoor and outdoor LED displays.
2 Normative References
The following documents are essential to the application of this document. For the
dated documents, only the versions with the dates indicated are applicable to this
document; for the undated documents, only the latest version (including all the
amendments) is applicable to this document.
GB/T 2423.3 Environmental Testing for Electric and Electronic Products - Part 2:
Testing Method Test Cab: Damp Heat Steady State
GB/T 4589.1-2006 Semiconductor Devices - Part 10: Generic Specification for
Discrete Devices and Integrated Circuits
GB/T 4937-1995 Mechanical and Climatic Test Methods for Semiconductor
Devices
GB/T 11499-2001 Letter Symbols for Discrete Semiconductor Devices
GB/T 12565-1990 Semiconductor Devices Sectional Specification for
Optoelectronic Devices
GB/T 15651 Semiconductor Devices Discrete Devices and Integrated Circuits
Part 5: Optoelectronic Devices
SJ/T 11394-2009 Measure Methods of Semiconductor Light Emitting Diodes
SJ/T 11395-2009 Semiconductor Lighting Terminology
SJ/T 11400-2009 Semiconductor Optoelectronic Devices - Blank Detail
Specification for Lower-Power Light-Emitting Diodes
a) Temperature: 25°C±2°C;
b) Relative humidity: 45%~55%;
c) Air pressure: 86kPa~106kPa
6.1.2 Darkroom conditions
The darkroom conditions shall be ≤1 lx.
6.2 Appearance
Under the conditions of environmental illumination of 300 lx~1000 lx, use a 3× to 10×
magnifier for inspection.
6.3 Overall dimensions
Use measuring tools that meet the accuracy requirements for measurement.
6.4 Measuring methods of photoelectric characteristics
6.4.1 Forward voltage
It shall be carried out according to the Method-1001 in SJ/T 11394-2009.
6.4.2 Average luminous intensity
It shall be carried out according to the Method-2001 in SJ/T 11394-2009.
6.4.3 Half-intensity angle
It shall be carried out according to the Method-2002 in SJ/T 11394-2009.
6.4.4 Reverse current
It shall be carried out according to the Method-1003 in SJ/T 11394-2009.
6.4.5 Dominant wavelength
It shall be carried out according to the Method-4003 in SJ/T 11394-2009.
6.4.6 Chromaticity coordinate
It shall be carried out according to the Method-4001/4002 in SJ/T 11394-2009.
6.5 Electrostatic discharge sensitivity
The human body mode shall be carried out according to the Method-6001 in SJ/T
11394-2009.
IVmin – the minimum actually-measured average luminous intensity; the unit of average
luminous intensity is cd;
IVD – average value of the average luminous intensity actually-measured for a lot of
samples; the unit of average luminous intensity is cd.
The change range of half-intensity angle shall be calculated as per Formula (4):
Where:
Δα – change range of half-intensity angle; the unit of half-intensity angle is °;
αmax – the maximum actually-measured half-intensity angle; the unit of half-intensity
angle is °;
αmin – the minimum actually-measured half-intensity angle; the unit of half-intensity
angle is °.
6.7 Environmental adaptability
It shall be carried out according to the provisions in Tables 5, 6 and 7.
7 Inspection Rules
7.1 General
The quality assessment procedure of LED shall comply with the provisions of GB/T
4589.1-2006, GB/T 12565-1990 and this Specification. The quality assessment
category is Class-II.
7.2 Classification of the inspection
The inspections specified in this Specification are divided into the following categories:
a) Inspection for identification and (see 7.3);
b) Inspection for quality consistency (see 7.4).
7.3 Inspection for identification
The inspection for identification shall be carried out in accordance with the inspection
items, inspection requirements and sampling plan specified in Tables 4, 5 and 6.
Appendix B
(Normative)
Test on Resistance to Welding Heat – Simulated
Reflow Soldering
B.1 Purpose
In order to evaluate the ability of surface-mounted LED devices to withstand welding
heat within the specified temperature and time conditions, this test is exempted from
pre-treatment, does not use flux or solder for soldering; and only simulates the reflow
soldering test procedures.
B.2 Test conditions
The conditions of the test on resistance to welding heat are as follows:
a) Maximum temperature
Class A: temperature 240°C ± 2°C;
Class B: temperature 250°C ± 2°C;
Class C: temperature 260°C ± 2°C;
b) Maximum temperature duration: 10s ± 1s;
c) Cycle: 3 times at intervals of 5 min ~ 8 min each.
B.3 Test procedures
Follow the procedures below:
a) The sample to be tested is placed on a printed circuit board, and the printed
circuit board shall have vias;
b) Test according to the reflow soldering temperature time curve and disc size given
in the LED product specification. The maximum temperature and duration shall
be in accordance with the provisions of B.2.
c) Repeat the test for three times according to the above steps, each test interval is
5 min~8 min.